The Quality and Reliability of Intel’s Quarter Micron Process

This paper describes how the quality and reliability of Intel’s products are designed, measured, modeled, and maintained. Four main reliability topics: ESD protection, electromigration, gate oxide wearout, and the modeling and management of mechanical stresses are discussed. Based on an analysis of the reliability implications of device scaling (the process of a planned reduction of dimensions and operating parameters), we show how these four topics are of prime importance to component reliability. We conclude with a brief discussion of the future challenges of energy scaling.